【title】：Noise characteristics of GaAs HBT'sNoise characteristics of GaAs HBT's
【Authors】：Henderson, G.N.; Wu, D.-W.
【Subject】：gallium arsenide; III-V semiconductors; heterojunction bipolar transistors; semiconductor device noise; equivalent circuits; noise characteristics; GaAs HBT; minimum noise figure; associated gain; M/A-COM process; equivalent circuit model; bias dependence; area dependence; frequency dependence; 2 GHz; 2 mA; 13 dB; 1.4 dB; GaAs
【Page】：1221_1224 vol.3【CorporateSource】：Corp. R&D, Lowell, MA, USA【ConferenceDte】：17-21 June 1996
【ISSN】：0-7803-3246-6【Volume】：3【Issue】：【Part】：【pdfd】：IELDVD023:3773:11022:512156【File Size】：274K
【Part】：【PublishDate】：1996【AccessionNumber】：5352690【Publisher】：Microwave Symposium Digest, 1996., IEEE MTT-S International【TotalPage】：3 vol. (xlviii+xxii+
【Abstract】：A complete characterization of the bias-, area-, and frequency-dependence of GaAs HBT noise characteristics is presented. It is shown that there is an optimum device area (emitter area) and bias condition for achieving a minimum noise figure, which for the M/A-COM process at 2 GHz occurs at an area of roughly 120 /spl mu/m/sup 2/ and a collector current of 2 mA yielding a minimum noise figure of 1.4 dB and an associated gain of 13 dB. The measured noise characteristics are validated by an extracted equivalent circuit model with associated noise sources.
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