Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene中国物理快报：英文版论文
【题名】：Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene中国物理快报：英文版论文(Ambipolar Thin-Film Field-Effect Transistor Based on PentaceneZhongGuoWuLiKuaiBao：YingWenBanLunWen) 【关键词】：二极薄膜场效应 晶体管 并五苯 有机化学 全蒸发法 电子迁移率 【keywords】：ErJiBaoMoChangXiaoYing JingTiGuan BingWuBen YouJiHuaXue QuanZhengFaFa DianZiQianYiLv 【作者】：王伟,石家纬,梁昌,张宏梅,刘大明大,全宝富,郭树旭,方俊峰,马东阁,      【来源】： 知识词典 【期刊名称】：中国物理快报：英文版(ZhongGuoWuLiKuaiBao：YingWenBan) 【国际标准刊号】：0256-307X        【国内统一刊号】：11-1959 【作者单位】：[1]NationalKeyLaboratoryofIntegratedOptoelectronics,JilinUniversity,Changchun130012 [2]StateKeyLaboratoryofPolymerPhysicsandChemistry,ChangchunInstituteofAppliedChemistry,ChineseAcademyofSciences,Changchun130022([1]NationalKeyLaboratoryofIntegratedOptoelectronics,JilinUniversity,Changchun130012 [2]StateKeyLaboratoryofPolymerPhysicsandChemistry,ChangchunInstituteofAppliedChemistry,ChineseAcademyofSciences,Changchun130022) 【分类号】：O484 O625.11      【页码】：-496-498      【出版年】：2005.2 【下载地址】：下载pdf全文         Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm^2/Vs, whereas the field-effect electron mobility was about O.02 cm^2 /Vs for n-channeL
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