Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device稀有金属材料与工程论文
【题名】：Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device稀有金属材料与工程论文(Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing DeviceXiYouJinShuCaiLiaoYuGongChengLunWen) 【关键词】： 【keywords】： 【作者】：Jung-Chuan Chou,Pei-Lan Chou,      【来源】： 知识词典 【期刊名称】：稀有金属材料与工程(XiYouJinShuCaiLiaoYuGongCheng) 【国际标准刊号】：1002-185X        【国内统一刊号】：61-1154 【作者单位】：[1]Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Taiwan 640, China [2]Graduate School of Optoelectronics, National Yunlin University of Science and Technology, Douliou, Taiwan 640, China([1]Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Taiwan 640, China [2]Graduate School of Optoelectronics, National Yunlin University of Science and Technology, Douliou, Taiwan 640, China) 【分类号】：TG      【页码】：-242-243      【出版年】：2006.A03 【下载地址】：下载pdf全文
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