The advantages of radical distribution control and independent dual frequency on etch／ash半导体技术论文
【题名】：The advantages of radical distribution control and independent dual frequency on etch／ash半导体技术论文(The advantages of radical distribution control and independent dual frequency on etch／ashBanDaoTiJiShuLunWen) 【关键词】：蚀刻 分布控制 独立双频 RDC SCCM 【keywords】：ShiKe FenBuKongZhi DuLiShuangPin RDC SCCM 【作者】：Li-HungChen BinLan TanakaHideaki] KubotaKazuhiro ShinOkamoto      【来源】： 知识词典 【期刊名称】：半导体技术(BanDaoTiJiShu) 【国际标准刊号】：1003-353X        【国内统一刊号】：13-1109/TN 【作者单位】：TokyoElectronLtd(TokyoElectronLtd) 【分类号】：TN305.7      【页码】：-41-46      【出版年】：2004.8 【下载地址】：下载pdf全文         The transition to 65 nm beyond and 300 mm wafers posed many challenges on etch depth and critical dimension (CD) uniformity within wafer. In this paper, we introduce a radical distribution control (RDC) system for an excellent uniformity control.Etch depth and CD uniformity within wafer are well controlled by adding RDC function to SCCMTM. For increasing productivity, an all-in-one process, that is, etch/ash at the same chamber continuously is proposed here. By utilizing the advantage of independent dual frequency, a bias-controlled two-stepash "hybrid ash" is combined in the all-in-one process. Hybrid ash uses bias control and low pressure to minimize liner loss and the damage of low-k materials, which is targeting 65nm and beyond.
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