Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers半导体光子学与技术：英文版论文
【题名】：Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers半导体光子学与技术：英文版论文(Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS ImagersBanDaoTiGuangZiXueYuJiShu：YingWenBanLunWen) 【关键词】：双极性互连晶体管 CMOS成像器 互补金属氧化物半导体 仿真 光电荷 【keywords】：ShuangJiXingHuLianJingTiGuan CMOSChengXiangQi HuBuJinShuYangHuaWuBanDaoTi FangZhen GuangDianHe 【作者】：JINXiang-liang CHENJie QIUYu-lin      【来源】： 知识词典 【期刊名称】：半导体光子学与技术：英文版(BanDaoTiGuangZiXueYuJiShu：YingWenBan) 【国际标准刊号】：1007-0206        【国内统一刊号】：50-1093 【作者单位】：MicroelectronlcsR&DCenter,ChineseAcademyofSciences,Beijing100029,CHN(MicroelectronlcsR&DCenter,ChineseAcademyofSciences,Beijing100029,CHN) 【分类号】：TN386.1      【页码】：-75-78      【出版年】：2003.2 【下载地址】：下载pdf全文         The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-Chrge transfer for the bipolar junction photogate is established in detail.Some numerical simulations are obtained unider 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-Charge at applied voltage.
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