A novel 10-nm physical gate length double-gate junction field effect transisto中国物理：英文版论文
【题名】：A novel 10-nm physical gate length double-gate junction field effect transisto中国物理：英文版论文(A novel 10-nm physical gate length double-gate junction field effect transistoZhongGuoWuLi：YingWenBanLunWen) 【关键词】：金属氧化物半导体场效应晶体管 损耗操作模式 电子学 电子管 【keywords】：JinShuYangHuaWuBanDaoTiChangXiaoYingJingTiGuan SunHaoCaoZuoMoShi DianZiXue DianZiGuan 【作者】：候晓宇,黄如,陈刚,刘晟,张兴,俞滨,王阳元,      【来源】： 知识词典 【期刊名称】：中国物理：英文版(ZhongGuoWuLi：YingWenBan) 【国际标准刊号】：1009-1963        【国内统一刊号】：11-4407 【作者单位】：[1]Institute of Microelectronics, Peking University, Beijing 100871, China [2]NASA Ames Research Center, Moffett Field, CA 94035, USA([1]Institute of Microelectronics, Peking University, Beijing 100871, China [2]NASA Ames Research Center, Moffett Field, CA 94035, USA) 【分类号】：O46      【页码】：-685-689      【出版年】：2008.2 【下载地址】：下载pdf全文
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