UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE高等学校计算数学学报：英文版论文
【题名】：UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE高等学校计算数学学报：英文版论文(UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICEGaoDengXueXiaoJiSuanShuXueXueBao：YingWenBanLunWen) 【关键词】：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体 【keywords】：YingFengYouXianTiJiGaiXing ChuZhiWenTi FeiXianXingPianWeiFenFangCheng ShuXueMoXing BanDaoTi 【作者】：杨青      【来源】： 知识词典 【期刊名称】：高等学校计算数学学报：英文版(GaoDengXueXiaoJiSuanShuXueXueBao：YingWenBan) 【国际标准刊号】：1004-8979        【国内统一刊号】：32-1348 【作者单位】：DepartmentofMathematics,ShandongNormalUniversity,Jinan250014,PRC／SchoolofMathematicsandSystemScience,ShandongUniversity,Jinan250100,PRC.(DepartmentofMathematics,ShandongNormalUniversity,Jinan250014,PRC／SchoolofMathematicsandSystemScience,ShandongUniversity,Jinan250100,PRC.) 【分类号】：TN304.0 O241.82      【页码】：-150-161      【出版年】：2003.2 【下载地址】：下载pdf全文         The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation m elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind volume element schemes for the two concentration equations. Error estimates in L2 norm for our numerical schemes are derived.
	【相关文献】
UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE - 高等学校计算数学学报：英文版 - 杨青 Mortar Upwind Finite Volume Element Method with Crouzeix-Raviart Element for Parabolic Convection Diffusion Problems - 高等学校计算数学学报：英文版 - Chunjia Bi FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE - 数学物理学报：B辑英文版 - 袁益让 IMPLICIT—EXPLICIT MULTISTEP FINITE ELEMENT METHODS FOR THE SEMICONDUCTOR DEVICE PROBLEM - 系统科学与复杂性：英文版 - CHENWei IMPLICIT－EXPLICIT MULTISTEP FINITE ELEMENT－MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE - 数学物理学报：B辑英文版 - 陈蔚 A Finite Difference Scheme for a Semiconductor Device Problem on Grids with Local Refinement in Time and Space - 高等学校计算数学学报：英文版 - Wei Liu Yirang Yuan A CLASS OF COMPACT UPWIND TVD DIFFERENCE SCHEMES - 应用数学和力学：英文版 - 涂国华[1,2] 袁湘江[1,2] 夏治强,呼振, Streamline upwind finite element method for conjugate heat transfer problems - 力学学报：英文版 - Niphon Wansophark Atipong Malatip Pramote Dechaumphai A Comparsion of Upwind Schemes Based on the Boltzmann Equation and the Euler Equations - 非线性科学与数值模拟通讯：英文版 - YongshengLIAN RuquanWANG Measurement of Moisture Inside the Hermetic Package of Semiconductor Device - 半导体光子学与技术：英文版 - XIEXuqiang,YUTieyan, Key Power Semiconductor Device Concepts for the Next Decade - 电源世界 - Leo Lorenz ON LOCKING-FREE FINITE ELEMENT SCHEMES FOR THREE-DIMENSIONAL ELASTICITY - 计算数学：英文版 - HeQi Lie-hengWang Wei-yingZheng ROBUSTNESS OF AN UPWIND FINITE DIFFERENCE SCHEME FOR SEMILINEAR CONVECTION-DIFFUSION PROBLEMS WITH BOUNDARY TURNING POINTS - 计算数学：英文版 - TorstenLinB THE UPWIND FINITE ELEMENT SCHEME AND MAXIMUM PRINCIPLE FOR NONLINEAR CONVECTION-DIFFUSION PROBLEM - 计算数学：英文版 - Zhi-yongZhao Jian-weiHu The　Modified　Upwind　Finite　Difference　Fractional　Steps　Method　for　Compressible　Two-phase　Displacement　Problem - 应用数学学报：英文版 - Yi-rangYuan
[baidu搜索]：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体 [google搜索]：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体 [sogou搜索]：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体 [yahoo搜索]：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体 [soso搜索]：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体 [有道搜索]：迎风有限体积概型 初值问题 非线性偏微分方程 数学模型 半导体