A Linght-Activated SiC Darlington Transistor Using SiCGe as Base Layer中国物理快报：英文版论文
【题名】：A Linght-Activated SiC Darlington Transistor Using SiCGe as Base Layer中国物理快报：英文版论文(A Linght-Activated SiC Darlington Transistor Using SiCGe as Base LayerZhongGuoWuLiKuaiBao：YingWenBanLunWen) 【关键词】：复合晶体管 电磁相干 碳化硅 【keywords】：FuHeJingTiGuan DianCiXiangGan TanHuaGui 【作者】：无      【来源】： 知识词典 【期刊名称】：中国物理快报：英文版(ZhongGuoWuLiKuaiBao：YingWenBan) 【国际标准刊号】：0256-307X        【国内统一刊号】：11-1959 【作者单位】：不详(BuXiang) 【分类号】：TN322.3       【页码】：-430-432      【出版年】：2003.3 【下载地址】：下载pdf全文         If a Darlington transistor is triggered by the photocurrent output from an individual photodiode,the electromagnetic interference (EMI) problem may still exist because the direct input of the Darlington is an actually electronic signal.To eliminate the EMI problem completely,we propose an absolutely light-activated Darlington transistor made of SiC,in which p-SiCGe/n-SiC heterojunction is employed to produce a base current by means of optical illumination.Performance of the novel light-activated power switch was simulated using MEDICI tools which has shown that the light-activated device has very good switching characteristics especially for a triggering light intensity greater than 02.3W/cm^2.FOr a relatively weak light,the device can be switched to the ON state only for a higher bias voltage.
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