Enfluence of Orientation of Side Ligand Group on Current Through Molecular Device中国科学基金：英文版论文
【题名】：Enfluence of Orientation of Side Ligand Group on Current Through Molecular Device中国科学基金：英文版论文(Enfluence of Orientation of Side Ligand Group on Current Through Molecular DeviceZhongGuoKeXueJiJin：YingWenBanLunWen) 【关键词】：分子电子学 分子器件 侧配位基 半导体材料 苯 【keywords】：FenZiDianZiXue FenZiQiJian CePeiWeiJi BanDaoTiCaiLiao Ben 【作者】：ChenH.,NoteR.,MizusekiH.,Kawazoey.,      【来源】： 知识词典 【期刊名称】：中国科学基金：英文版(ZhongGuoKeXueJiJin：YingWenBan) 【国际标准刊号】：1005-0841        【国内统一刊号】：11-2851/N 【作者单位】：[1]DepartmentofPhysics,FudanUniversity,Shanghai200433 [2]InstituteforMaterialsResearch,TohokuUniversity,Sendai980-8577,Japan([1]DepartmentofPhysics,FudanUniversity,Shanghai200433 [2]InstituteforMaterialsResearch,TohokuUniversity,Sendai980-8577,Japan) 【分类号】：TN303 TN304.5      【页码】：-45-49      【出版年】：2004.1 【下载地址】：下载pdf全文          The recent significant advances in the molecular electronics show that the molecular device is a good candidate with great potential as the successor to the sil-icon-based semi-conductors. After the successful ex-perimental work made by Reed et al. in which the sin-gle benzene molecule acts as the core of the molecular device, many experimental and theoretical investiga-tions have been done on this subject.
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