Hot-carrier degradation for 90 nm gate length LDD- NMOSFET with ultra-thin gate oxide under low gate voltage stress中国物理：英文版论文
【题名】：Hot-carrier degradation for 90 nm gate length LDD- NMOSFET with ultra-thin gate oxide under low gate voltage stress中国物理：英文版论文(Hot-carrier degradation for 90 nm gate length LDD- NMOSFET with ultra-thin gate oxide under low gate voltage stressZhongGuoWuLi：YingWenBanLunWen) 【关键词】：热载流子衰变 轻掺杂漏 NMOSFET 超薄栅极氧化物 门电压 栅极长度 热空穴 漏电流 【keywords】：ReZaiLiuZiShuaiBian QingChanZaLou NMOSFET ChaoBaoZhaJiYangHuaWu MenDianYa ZhaJiChangDu ReKongXue LouDianLiu 【作者】：陈海峰 郝跃 马晓华 李康 倪金玉      【来源】： 知识词典 【期刊名称】：中国物理：英文版(ZhongGuoWuLi：YingWenBan) 【国际标准刊号】：1009-1963        【国内统一刊号】：11-4407 【作者单位】：School of Microelectronics, Xidian University, Xi＇an 710071, China(School of Microelectronics, Xidian University, Xi＇an 710071, China) 【分类号】：TN386      【页码】：-821-825      【出版年】：2007.3 【下载地址】：下载pdf全文
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